BSZ15DC02KDHXTMA1 Preț (USD) [213080buc Stoc]
- 1 pcs$0.17445
- 5,000 pcs$0.17358
- Numărul piesei:
- BSZ15DC02KDHXTMA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET N/P-CH 20V 8TDSON.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Zener - Arrays, Tiristoare - TRIAC, Dioduri - punți redresoare, Tiristoare - SCR - Module, Tranzistori - scop special, Tranzistori - IGBT - Single, Modulele Power Driver and Tranzistori - Bipolari (BJT) - Arrays, pre-biased ...
- Avantaj competitiv:
- We specialize in Infineon Technologies BSZ15DC02KDHXTMA1 electronic components. BSZ15DC02KDHXTMA1 can be shipped within 24 hours after order. If you have any demands for BSZ15DC02KDHXTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ15DC02KDHXTMA1 Atributele produsului
Numărul piesei :
BSZ15DC02KDHXTMA1
Producător :
Infineon Technologies
Descriere :
MOSFET N/P-CH 20V 8TDSON
Serie :
Automotive, AEC-Q101, HEXFET®
Starea parțială :
Active
Tipul FET :
N and P-Channel Complementary
FET Feature :
Logic Level Gate, 2.5V Drive
Scurgeți la sursa de tensiune (Vdss) :
20V
Curent - scurgere continuă (Id) la 25 ° C :
5.1A, 3.2A
Rds On (Max) @ Id, Vgs :
55 mOhm @ 5.1A, 4.5V
Vgs (a) (Max) @ Id :
1.4V @ 110µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
2.8nC @ 4.5V
Capacitate de intrare (Ciss) (Max) @ Vds :
419pF @ 10V
Putere - Max :
2.5W
Temperatura de Operare :
-55°C ~ 175°C (TJ)
Tipul de montare :
Surface Mount
Pachet / Caz :
8-PowerTDFN
Pachetul dispozitivelor furnizorilor :
PG-TSDSON-8-FL
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