IPG20N10S4L35AATMA1 Preț (USD) [182536buc Stoc]
- 1 pcs$0.20263
- 5,000 pcs$0.18591
- Numărul piesei:
- IPG20N10S4L35AATMA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET 2N-CH 8TDSON.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Capacitate variabilă (Varicaps, Varactor, Dioduri - Zener - Arrays, Dioduri - punți redresoare, Modulele Power Driver, Tiristoare - DIAC, SIDAC, Tranzistori - Bipolari (BJT) - Single, Dioduri - Zener - Single and Dioduri - RF ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IPG20N10S4L35AATMA1 electronic components. IPG20N10S4L35AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N10S4L35AATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N10S4L35AATMA1 Atributele produsului
Numărul piesei :
IPG20N10S4L35AATMA1
Producător :
Infineon Technologies
Descriere :
MOSFET 2N-CH 8TDSON
Serie :
Automotive, AEC-Q101, OptiMOS™
Starea parțială :
Active
Tipul FET :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Scurgeți la sursa de tensiune (Vdss) :
100V
Curent - scurgere continuă (Id) la 25 ° C :
20A
Rds On (Max) @ Id, Vgs :
35 mOhm @ 17A, 10V
Vgs (a) (Max) @ Id :
2.1V @ 16µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
17.4nC @ 10V
Capacitate de intrare (Ciss) (Max) @ Vds :
1105pF @ 25V
Putere - Max :
43W
Temperatura de Operare :
-55°C ~ 175°C (TJ)
Tipul de montare :
Surface Mount
Pachet / Caz :
8-PowerVDFN
Pachetul dispozitivelor furnizorilor :
PG-TDSON-8-10
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