SQJ262EP-T1_GE3 Preț (USD) [158402buc Stoc]
- 1 pcs$0.23350
- Numărul piesei:
- SQJ262EP-T1_GE3
- Producător:
- Vishay Siliconix
- Descriere detaliata:
- MOSFET 2 N-CH 60V POWERPAK SO8.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - RF, Tranzistori - Module IGBT, Dioduri - Zener - Arrays, Tiristoare - DIAC, SIDAC, Dioduri - Zener - Single, Tranzistori - FET, MOSFET - Arrays, Tranzistori - Bipolari (BJT) - Arrays and Tranzistori - IGBT - Single ...
- Avantaj competitiv:
- We specialize in Vishay Siliconix SQJ262EP-T1_GE3 electronic components. SQJ262EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ262EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ262EP-T1_GE3 Atributele produsului
Numărul piesei :
SQJ262EP-T1_GE3
Producător :
Vishay Siliconix
Descriere :
MOSFET 2 N-CH 60V POWERPAK SO8
Serie :
Automotive, AEC-Q101, TrenchFET®
Starea parțială :
Active
Tipul FET :
2 N-Channel (Dual)
FET Feature :
Standard
Scurgeți la sursa de tensiune (Vdss) :
60V
Curent - scurgere continuă (Id) la 25 ° C :
15A (Tc), 40A (Tc)
Rds On (Max) @ Id, Vgs :
35.5 mOhm @ 2A, 10V, 15.5 mOhm @ 5A, 10V
Vgs (a) (Max) @ Id :
2.5V @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
10nC @ 10V, 23nC @ 10V
Capacitate de intrare (Ciss) (Max) @ Vds :
550pF @ 25V, 1260pF @ 25V
Putere - Max :
27W (Tc), 48W (Tc)
Temperatura de Operare :
-55°C ~ 175°C (TJ)
Tipul de montare :
Surface Mount
Pachet / Caz :
PowerPAK® SO-8 Dual
Pachetul dispozitivelor furnizorilor :
PowerPAK® SO-8 Dual Asymmetric
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