TK6A80E,S4X Preț (USD) [49481buc Stoc]
- 1 pcs$0.86965
- 50 pcs$0.70249
- 100 pcs$0.63225
- 500 pcs$0.49176
- 1,000 pcs$0.40746
- Numărul piesei:
- TK6A80E,S4X
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET N-CH 800V TO220SIS.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tiristoare - TRIAC, Dioduri - Capacitate variabilă (Varicaps, Varactor, Dioduri - Zener - Arrays, Dioduri - Redresoare - Single, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - scop special, Tranzistori - Module IGBT and Dioduri - RF ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TK6A80E,S4X electronic components. TK6A80E,S4X can be shipped within 24 hours after order. If you have any demands for TK6A80E,S4X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK6A80E,S4X Atributele produsului
Numărul piesei :
TK6A80E,S4X
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET N-CH 800V TO220SIS
Serie :
π-MOSVIII
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
800V
Curent - scurgere continuă (Id) la 25 ° C :
6A (Ta)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
1.7 Ohm @ 3A, 10V
Vgs (a) (Max) @ Id :
4V @ 600µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±30V
Capacitate de intrare (Ciss) (Max) @ Vds :
1350pF @ 25V
FET Feature :
-
Distrugerea puterii (Max) :
45W (Tc)
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Through Hole
Pachetul dispozitivelor furnizorilor :
TO-220SIS
Pachet / Caz :
TO-220-3 Full Pack
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