IPB65R280E6ATMA1 Preț (USD) [68425buc Stoc]
- 1 pcs$0.57144
- 1,000 pcs$0.52423
- Numărul piesei:
- IPB65R280E6ATMA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET N-CH TO263-3.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Modulele Power Driver, Dioduri - RF, Tranzistori - FET, MOSFET - Single, Dioduri - Zener - Single, Dioduri - Zener - Arrays, Tranzistori - scop special, Tiristoare - DIAC, SIDAC and Dioduri - Redresoare - Single ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IPB65R280E6ATMA1 electronic components. IPB65R280E6ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB65R280E6ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB65R280E6ATMA1 Atributele produsului
Numărul piesei :
IPB65R280E6ATMA1
Producător :
Infineon Technologies
Descriere :
MOSFET N-CH TO263-3
Serie :
CoolMOS™ E6
Starea parțială :
Not For New Designs
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
650V
Curent - scurgere continuă (Id) la 25 ° C :
13.8A (Tc)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
280 mOhm @ 4.4A, 10V
Vgs (a) (Max) @ Id :
3.5V @ 440µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
950pF @ 100V
FET Feature :
-
Distrugerea puterii (Max) :
104W (Tc)
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
D²PAK (TO-263AB)
Pachet / Caz :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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