BSC072N03LDGATMA1 Preț (USD) [160653buc Stoc]
- 1 pcs$0.23023
- Numărul piesei:
- BSC072N03LDGATMA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET 2N-CH 30V 11.5A 8TDSON.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - RF, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - scop special, Tranzistori - FET, MOSFET - Single, Tranzistori - IGBT - Single, Dioduri - Zener - Single, Tranzistori - Bipolari (BJT) - Arrays and Tranzistori - Bipolari (BJT) - Single ...
- Avantaj competitiv:
- We specialize in Infineon Technologies BSC072N03LDGATMA1 electronic components. BSC072N03LDGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC072N03LDGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC072N03LDGATMA1 Atributele produsului
Numărul piesei :
BSC072N03LDGATMA1
Producător :
Infineon Technologies
Descriere :
MOSFET 2N-CH 30V 11.5A 8TDSON
Serie :
OptiMOS™
Starea parțială :
Active
Tipul FET :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Scurgeți la sursa de tensiune (Vdss) :
30V
Curent - scurgere continuă (Id) la 25 ° C :
11.5A
Rds On (Max) @ Id, Vgs :
7.2 mOhm @ 20A, 10V
Vgs (a) (Max) @ Id :
2.2V @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
41nC @ 10V
Capacitate de intrare (Ciss) (Max) @ Vds :
3500pF @ 15V
Putere - Max :
57W
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachet / Caz :
8-PowerVDFN
Pachetul dispozitivelor furnizorilor :
PG-TDSON-8 Dual
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