SI9926CDY-T1-GE3 Preț (USD) [226109buc Stoc]
- 1 pcs$0.16358
- 2,500 pcs$0.14319
- Numărul piesei:
- SI9926CDY-T1-GE3
- Producător:
- Vishay Siliconix
- Descriere detaliata:
- MOSFET 2N-CH 20V 8A 8-SOIC.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - Arrays, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Modulele Power Driver, Dioduri - Redresoare - Arrays, Tiristoare - TRIAC, Tranzistori - Bipolari (BJT) - Arrays, Tiristoare - SCR-uri and Tranzistori - IGBT - Single ...
- Avantaj competitiv:
- We specialize in Vishay Siliconix SI9926CDY-T1-GE3 electronic components. SI9926CDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI9926CDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI9926CDY-T1-GE3 Atributele produsului
Numărul piesei :
SI9926CDY-T1-GE3
Producător :
Vishay Siliconix
Descriere :
MOSFET 2N-CH 20V 8A 8-SOIC
Serie :
TrenchFET®
Starea parțială :
Active
Tipul FET :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Scurgeți la sursa de tensiune (Vdss) :
20V
Curent - scurgere continuă (Id) la 25 ° C :
8A
Rds On (Max) @ Id, Vgs :
18 mOhm @ 8.3A, 4.5V
Vgs (a) (Max) @ Id :
1.5V @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
33nC @ 10V
Capacitate de intrare (Ciss) (Max) @ Vds :
1200pF @ 10V
Putere - Max :
3.1W
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachet / Caz :
8-SOIC (0.154", 3.90mm Width)
Pachetul dispozitivelor furnizorilor :
8-SO
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