IPP65R110CFDAAKSA1 Preț (USD) [12160buc Stoc]
- 1 pcs$3.27440
- 10 pcs$2.92272
- 100 pcs$2.39648
- 500 pcs$1.94058
- 1,000 pcs$1.63663
- Numărul piesei:
- IPP65R110CFDAAKSA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET N-CH 650V TO-220-3.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Modulele Power Driver, Dioduri - Redresoare - Single, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - Redresoare - Arrays, Tranzistori - FET, MOSFET - Single, Tranzistori - FET, MOSFET - RF, Tranzistori - IGBT - Arrays and Dioduri - Zener - Single ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IPP65R110CFDAAKSA1 electronic components. IPP65R110CFDAAKSA1 can be shipped within 24 hours after order. If you have any demands for IPP65R110CFDAAKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP65R110CFDAAKSA1 Atributele produsului
Numărul piesei :
IPP65R110CFDAAKSA1
Producător :
Infineon Technologies
Descriere :
MOSFET N-CH 650V TO-220-3
Serie :
Automotive, AEC-Q101, CoolMOS™
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
650V
Curent - scurgere continuă (Id) la 25 ° C :
31.2A (Tc)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
110 mOhm @ 12.7A, 10V
Vgs (a) (Max) @ Id :
4.5V @ 1.3mA
Chargeul prin poștă (Qg) (Max) @ Vgs :
118nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
3240pF @ 100V
FET Feature :
-
Distrugerea puterii (Max) :
277.8W (Tc)
Temperatura de Operare :
-40°C ~ 150°C (TJ)
Tipul de montare :
Through Hole
Pachetul dispozitivelor furnizorilor :
PG-TO220-3
Pachet / Caz :
TO-220-3
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