Samsung Semiconductor - K4A8G085WB-BIRC

KEY Part #: K7359598

[21766buc Stoc]


    Numărul piesei:
    K4A8G085WB-BIRC
    Producător:
    Samsung Semiconductor
    Descriere detaliata:
    8 Gb 1G x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.
    Timpul de livrare standard al producătorului:
    In stoc
    Termen de valabilitate:
    Un an
    Chip From:
    Hong Kong
    RoHS:
    Modalitate de plată:
    Mod de expediere:
    Categorii de familii:
    KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: LPDDR3, LPDDR4, SLC Nand, DDR4, LPDDR5, DDR3, HBM Flarebolt and HBM Aquabolt ...
    Avantaj competitiv:
    We specialize in Samsung Semiconductor K4A8G085WB-BIRC electronic components. K4A8G085WB-BIRC can be shipped within 24 hours after order. If you have any demands for K4A8G085WB-BIRC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A8G085WB-BIRC Atributele produsului

    Numărul piesei : K4A8G085WB-BIRC
    Producător : Samsung Semiconductor
    Descriere : 8 Gb 1G x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production
    Serie : DDR4
    Densitate : 8 Gb
    Org. : 1G x 8
    Viteză : 2400 Mbps
    Voltaj : 1.2 V
    Temp. : -40 ~ 95 °C
    Pachet : 78FBGA
    Stare produs : Mass Production

    Poți fi, de asemenea, interesat
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.