Dacă locația dvs. nu este listată, selectați una dintre următoarele:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Dacă locația dvs. nu este listată, selectați una dintre următoarele:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Acasă
  2. Produse
  3. DRAM
  4. DDR4
  5. K4A8G165WB-BCTD

Samsung Semiconductor - K4A8G165WB-BCTD

KEY Part #: K7359608

[25398buc Stoc]

    Numărul piesei:
    K4A8G165WB-BCTD
    Producător:
    Samsung Semiconductor
    Descriere detaliata:
    8 Gb 512M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.
    Timpul de livrare standard al producătorului:
    In stoc
    Termen de valabilitate:
    Un an
    Chip From:
    Hong Kong
    RoHS:
    Modalitate de plată:
    Mod de expediere:
    Categorii de familii:
    KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: HBM Flarebolt, LPDDR4, SLC Nand, LPDDR3, LPDDR5, DDR4, DDR3 and GDDR6 ...
    Avantaj competitiv:
    We specialize in Samsung Semiconductor K4A8G165WB-BCTD electronic components. K4A8G165WB-BCTD can be shipped within 24 hours after order. If you have any demands for K4A8G165WB-BCTD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A8G165WB-BCTD Atributele produsului

    Numărul piesei : K4A8G165WB-BCTD
    Producător : Samsung Semiconductor
    Descriere : 8 Gb 512M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
    Serie : DDR4
    Densitate : 8 Gb
    Org. : 512M x 16
    Viteză : 2666 Mbps
    Voltaj : 1.2 V
    Temp. : 0 ~ 85 °C
    Pachet : 96FBGA
    Stare produs : Mass Production

    Cele mai recente știri

    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Poți fi, de asemenea, interesat
    • KHA844801X-MC12

      Samsung Semiconductor

      4 Gb 1024 2.0 Gbps 32 ms MPGA Mass Production.

    • KHA844801X-MC13

      Samsung Semiconductor

      4 Gb 1024 2.4 Gbps 32 ms MPGA Mass Production.

    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    Piese calde