Samsung Semiconductor - K4A8G165WB-BITD

KEY Part #: K7359611

[26874buc Stoc]


    Numărul piesei:
    K4A8G165WB-BITD
    Producător:
    Samsung Semiconductor
    Descriere detaliata:
    8 Gb 512M x 16 2666 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.
    Timpul de livrare standard al producătorului:
    In stoc
    Termen de valabilitate:
    Un an
    Chip From:
    Hong Kong
    RoHS:
    Modalitate de plată:
    Mod de expediere:
    Categorii de familii:
    KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: HBM Flarebolt, GDDR6, DDR3, LPDDR3, DDR4, GDDR5, LPDDR4X and SLC Nand ...
    Avantaj competitiv:
    We specialize in Samsung Semiconductor K4A8G165WB-BITD electronic components. K4A8G165WB-BITD can be shipped within 24 hours after order. If you have any demands for K4A8G165WB-BITD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A8G165WB-BITD Atributele produsului

    Numărul piesei : K4A8G165WB-BITD
    Producător : Samsung Semiconductor
    Descriere : 8 Gb 512M x 16 2666 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production
    Serie : DDR4
    Densitate : 8 Gb
    Org. : 512M x 16
    Viteză : 2666 Mbps
    Voltaj : 1.2 V
    Temp. : -40 ~ 95 °C
    Pachet : 96FBGA
    Stare produs : Mass Production

    Poți fi, de asemenea, interesat
    • KHA844801X-MC12

      Samsung Semiconductor

      4 Gb 1024 2.0 Gbps 32 ms MPGA Mass Production.

    • KHA844801X-MC13

      Samsung Semiconductor

      4 Gb 1024 2.4 Gbps 32 ms MPGA Mass Production.

    • KHA844801X-MN12

      Samsung Semiconductor

      4 Gb 1024 2.0 Gbps 32 ms MPGA Mass Production.

    • KHA844801X-MN13

      Samsung Semiconductor

      4 Gb 1024 2.4 Gbps 32 ms MPGA Mass Production.

    • KHA884901X-MC12

      Samsung Semiconductor

      8 Gb 1024 2.0 Gbps 32 ms MPGA Mass Production.

    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.