TPN2R304PL,L1Q Preț (USD) [335682buc Stoc]
- 1 pcs$0.11746
- 5,000 pcs$0.11688
- Numărul piesei:
- TPN2R304PL,L1Q
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET N-CH 40V 80A TSON.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Modulele Power Driver, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Dioduri - Zener - Single, Dioduri - Zener - Arrays, Tranzistori - Bipolari (BJT) - RF, Tranzistori - scop special, Tranzistori - Bipolari (BJT) - Unic, pre-Biased and Tiristoare - SCR-uri ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TPN2R304PL,L1Q electronic components. TPN2R304PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPN2R304PL,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN2R304PL,L1Q Atributele produsului
Numărul piesei :
TPN2R304PL,L1Q
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET N-CH 40V 80A TSON
Serie :
U-MOSIX-H
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
40V
Curent - scurgere continuă (Id) la 25 ° C :
80A (Tc)
Tensiunea de transmisie (valorile max. :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.3 mOhm @ 40A, 10V
Vgs (a) (Max) @ Id :
2.4V @ 0.3mA
Chargeul prin poștă (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
3600pF @ 20V
FET Feature :
-
Distrugerea puterii (Max) :
630mW (Ta), 104W (Tc)
Temperatura de Operare :
175°C
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
8-TSON Advance (3.3x3.3)
Pachet / Caz :
8-PowerVDFN
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