VS-GB100TH120N Preț (USD) [261buc Stoc]
- 1 pcs$177.68022
- 12 pcs$163.71967
- Numărul piesei:
- VS-GB100TH120N
- Producător:
- Vishay Semiconductor Diodes Division
- Descriere detaliata:
- IGBT 1200V 200A 833W INT-A-PAK.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tiristoare - SCR - Module, Tranzistori - scop special, Tranzistori - IGBT - Single, Tranzistori - JFET-uri, Tranzistori - Module IGBT, Modulele Power Driver, Dioduri - Capacitate variabilă (Varicaps, Varactor and Dioduri - Zener - Arrays ...
- Avantaj competitiv:
- We specialize in Vishay Semiconductor Diodes Division VS-GB100TH120N electronic components. VS-GB100TH120N can be shipped within 24 hours after order. If you have any demands for VS-GB100TH120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB100TH120N Atributele produsului
Numărul piesei :
VS-GB100TH120N
Producător :
Vishay Semiconductor Diodes Division
Descriere :
IGBT 1200V 200A 833W INT-A-PAK
Serie :
-
Starea parțială :
Active
Tip IGBT :
-
configurație :
Half Bridge
Tensiune - emițător colector (Max) :
1200V
Curent - Colector (Ic) (Max) :
200A
Putere - Max :
833W
Vce (pe) (Max) @ Vge, Ic :
2.35V @ 15V, 100A
Curentul curent - colector (maxim) :
5mA
Capacitate de intrare (Cies) @ Vce :
8.58nF @ 25V
Intrare :
Standard
Termistor NTC :
No
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Chassis Mount
Pachet / Caz :
Double INT-A-PAK (3 + 4)
Pachetul dispozitivelor furnizorilor :
Double INT-A-PAK
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