[877buc Stoc]
- Numărul piesei:
- BSM35GD120DN2
- Producător:
- Infineon Technologies
- Descriere detaliata:
- IGBT BSM35GD120DN2BOSA1.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tiristoare - DIAC, SIDAC, Tranzistori - FET, MOSFET - Single, Dioduri - RF, Dioduri - Zener - Arrays, Modulele Power Driver, Tranzistori - JFET-uri, Tranzistori - Bipolari (BJT) - Unic, pre-Biased and Tiristoare - SCR - Module ...
- Avantaj competitiv:
- We specialize in Infineon Technologies BSM35GD120DN2 electronic components. BSM35GD120DN2 can be shipped within 24 hours after order. If you have any demands for BSM35GD120DN2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM35GD120DN2 Atributele produsului
Numărul piesei :
BSM35GD120DN2
Producător :
Infineon Technologies
Descriere :
IGBT BSM35GD120DN2BOSA1
Serie :
-
Starea parțială :
Obsolete
Tip IGBT :
NPT
configurație :
Three Phase Inverter
Tensiune - emițător colector (Max) :
1200V
Curent - Colector (Ic) (Max) :
50A
Putere - Max :
280W
Vce (pe) (Max) @ Vge, Ic :
3.2V @ 15V, 35A
Curentul curent - colector (maxim) :
-
Capacitate de intrare (Cies) @ Vce :
2nF @ 25V
Intrare :
Standard
Termistor NTC :
No
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Chassis Mount
Pachet / Caz :
Module
Pachetul dispozitivelor furnizorilor :
Module
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