BSM100GD120DN2BOSA1 Preț (USD) [383buc Stoc]
- 1 pcs$121.22283
- Numărul piesei:
- BSM100GD120DN2BOSA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- IGBT 2 LOW POWER ECONO3-1.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Redresoare - Single, Tranzistori - IGBT - Arrays, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - FET, MOSFET - RF, Tranzistori - Module IGBT, Tranzistori - Bipolari (BJT) - RF, Tranzistori - Bipolari (BJT) - Arrays, pre-biased and Tiristoare - SCR - Module ...
- Avantaj competitiv:
- We specialize in Infineon Technologies BSM100GD120DN2BOSA1 electronic components. BSM100GD120DN2BOSA1 can be shipped within 24 hours after order. If you have any demands for BSM100GD120DN2BOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM100GD120DN2BOSA1 Atributele produsului
Numărul piesei :
BSM100GD120DN2BOSA1
Producător :
Infineon Technologies
Descriere :
IGBT 2 LOW POWER ECONO3-1
Serie :
-
Starea parțială :
Not For New Designs
Tip IGBT :
-
configurație :
Three Phase Inverter
Tensiune - emițător colector (Max) :
1200V
Curent - Colector (Ic) (Max) :
150A
Putere - Max :
680W
Vce (pe) (Max) @ Vge, Ic :
3V @ 15V, 100A
Curentul curent - colector (maxim) :
2mA
Capacitate de intrare (Cies) @ Vce :
6.5nF @ 25V
Intrare :
Standard
Termistor NTC :
No
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Chassis Mount
Pachet / Caz :
Module
Pachetul dispozitivelor furnizorilor :
Module
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