BSO612CVGHUMA1 Preț (USD) [210131buc Stoc]
- 1 pcs$0.17602
- 2,500 pcs$0.16896
- Numărul piesei:
- BSO612CVGHUMA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET N/P-CH 60V 2A 8-SOIC.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - RF, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - Bipolari (BJT) - RF, Dioduri - Zener - Single, Tranzistori - Bipolari (BJT) - Single, Modulele Power Driver, Tranzistori - IGBT - Single and Tranzistori - Unijuncții programabile ...
- Avantaj competitiv:
- We specialize in Infineon Technologies BSO612CVGHUMA1 electronic components. BSO612CVGHUMA1 can be shipped within 24 hours after order. If you have any demands for BSO612CVGHUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO612CVGHUMA1 Atributele produsului
Numărul piesei :
BSO612CVGHUMA1
Producător :
Infineon Technologies
Descriere :
MOSFET N/P-CH 60V 2A 8-SOIC
Serie :
SIPMOS®
Starea parțială :
Active
Tipul FET :
N and P-Channel
FET Feature :
Standard
Scurgeți la sursa de tensiune (Vdss) :
60V
Curent - scurgere continuă (Id) la 25 ° C :
3A, 2A
Rds On (Max) @ Id, Vgs :
120 mOhm @ 3A, 10V
Vgs (a) (Max) @ Id :
4V @ 20µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
15.5nC @ 10V
Capacitate de intrare (Ciss) (Max) @ Vds :
340pF @ 25V
Putere - Max :
2W
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachet / Caz :
8-SOIC (0.154", 3.90mm Width)
Pachetul dispozitivelor furnizorilor :
PG-DSO-8
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