Toshiba Semiconductor and Storage - TPC8026(TE12L,Q,M)

KEY Part #: K6407351

[1003buc Stoc]

Numărul piesei:: TPC8026(TE12L,Q,M)

Producător:: Toshiba Semiconductor and Storage

Descriere detaliata:: MOSFET N-CH 30V 13A 8-SOIC.

Timpul de livrare standard al producătorului:: In stoc

Termen de valabilitate:: Un an

Chip From:: Hong Kong

RoHS:

Modalitate de plată:

Mod de expediere:

Categorii de familii:: KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - Arrays, Tiristoare - SCR-uri, Tranzistori - JFET-uri, Tranzistori - FET, MOSFET - Single, Tranzistori - IGBT - Single, Dioduri - Zener - Arrays, Tranzistori - FET, MOSFET - RF and Tiristoare - SCR - Module ...

Avantaj competitiv:: We specialize in Toshiba Semiconductor and Storage TPC8026(TE12L,Q,M) electronic components. TPC8026(TE12L,Q,M) can be shipped within 24 hours after order. If you have any demands for TPC8026(TE12L,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com

TPC8026(TE12L,Q,M) Atributele produsului

Numărul piesei : TPC8026(TE12L,Q,M)

Producător : Toshiba Semiconductor and Storage

Descriere : MOSFET N-CH 30V 13A 8-SOIC

Serie : -

Starea parțială : Obsolete

Tipul FET : N-Channel

Tehnologie : MOSFET (Metal Oxide)

Scurgeți la sursa de tensiune (Vdss) : 30V

Curent - scurgere continuă (Id) la 25 ° C : 13A (Ta)

Tensiunea de transmisie (valorile max. : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 6.6 mOhm @ 6.5A, 10V

Vgs (a) (Max) @ Id : 2.5V @ 1mA

Chargeul prin poștă (Qg) (Max) @ Vgs : 42nC @ 10V

Vgs (Max) : ±20V

Capacitate de intrare (Ciss) (Max) @ Vds : 1800pF @ 10V

FET Feature : -

Distrugerea puterii (Max) : 1W (Ta)

Temperatura de Operare : 150°C (TJ)

Tipul de montare : Surface Mount

Pachetul dispozitivelor furnizorilor : 8-SOP (5.5x6.0)

Pachet / Caz : 8-SOIC (0.173", 4.40mm Width)

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Toshiba Semiconductor and Storage - TPC8026(TE12L,Q,M)

[1003buc Stoc]

TPC8026(TE12L,Q,M) Atributele produsului

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