ZXMN3F31DN8TA Preț (USD) [193225buc Stoc]
- 1 pcs$0.19142
- 500 pcs$0.10528
- Numărul piesei:
- ZXMN3F31DN8TA
- Producător:
- Diodes Incorporated
- Descriere detaliata:
- MOSFET 2N-CH 30V 5.7A 8SOIC.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - RF, Modulele Power Driver, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - FET, MOSFET - Arrays, Tranzistori - FET, MOSFET - Single, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tiristoare - TRIAC and Dioduri - RF ...
- Avantaj competitiv:
- We specialize in Diodes Incorporated ZXMN3F31DN8TA electronic components. ZXMN3F31DN8TA can be shipped within 24 hours after order. If you have any demands for ZXMN3F31DN8TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN3F31DN8TA Atributele produsului
Numărul piesei :
ZXMN3F31DN8TA
Producător :
Diodes Incorporated
Descriere :
MOSFET 2N-CH 30V 5.7A 8SOIC
Serie :
-
Starea parțială :
Active
Tipul FET :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Scurgeți la sursa de tensiune (Vdss) :
30V
Curent - scurgere continuă (Id) la 25 ° C :
5.7A
Rds On (Max) @ Id, Vgs :
24 mOhm @ 7A, 10V
Vgs (a) (Max) @ Id :
3V @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
12.9nC @ 10V
Capacitate de intrare (Ciss) (Max) @ Vds :
608pF @ 15V
Putere - Max :
1.8W
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachet / Caz :
8-SOIC (0.154", 3.90mm Width)
Pachetul dispozitivelor furnizorilor :
8-SO
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