IRF7351PBF Preț (USD) [3924buc Stoc]
- 1 pcs$0.75676
- 10 pcs$0.67063
- 100 pcs$0.53003
- 500 pcs$0.41105
- 1,000 pcs$0.30697
- Numărul piesei:
- IRF7351PBF
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET 2N-CH 60V 8A 8-SOIC.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tiristoare - TRIAC, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Dioduri - Redresoare - Single, Tranzistori - Bipolari (BJT) - Single, Tiristoare - SCR-uri, Tranzistori - FET, MOSFET - RF and Tranzistori - scop special ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IRF7351PBF electronic components. IRF7351PBF can be shipped within 24 hours after order. If you have any demands for IRF7351PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7351PBF Atributele produsului
Numărul piesei :
IRF7351PBF
Producător :
Infineon Technologies
Descriere :
MOSFET 2N-CH 60V 8A 8-SOIC
Serie :
HEXFET®
Starea parțială :
Discontinued at Digi-Key
Tipul FET :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Scurgeți la sursa de tensiune (Vdss) :
60V
Curent - scurgere continuă (Id) la 25 ° C :
8A
Rds On (Max) @ Id, Vgs :
17.8 mOhm @ 8A, 10V
Vgs (a) (Max) @ Id :
4V @ 50µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
36nC @ 10V
Capacitate de intrare (Ciss) (Max) @ Vds :
1330pF @ 30V
Putere - Max :
2W
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachet / Caz :
8-SOIC (0.154", 3.90mm Width)
Pachetul dispozitivelor furnizorilor :
8-SO
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