NVMFS5C638NLWFT1G Preț (USD) [120903buc Stoc]
- 1 pcs$0.30593
- Numărul piesei:
- NVMFS5C638NLWFT1G
- Producător:
- ON Semiconductor
- Descriere detaliata:
- 60V 3.0 MOHM T6 S08FL SIN.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - RF, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - scop special, Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - IGBT - Single, Dioduri - punți redresoare, Dioduri - Redresoare - Single and Tranzistori - FET, MOSFET - Arrays ...
- Avantaj competitiv:
- We specialize in ON Semiconductor NVMFS5C638NLWFT1G electronic components. NVMFS5C638NLWFT1G can be shipped within 24 hours after order. If you have any demands for NVMFS5C638NLWFT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFS5C638NLWFT1G Atributele produsului
Numărul piesei :
NVMFS5C638NLWFT1G
Producător :
ON Semiconductor
Descriere :
60V 3.0 MOHM T6 S08FL SIN
Serie :
Automotive, AEC-Q101
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
60V
Curent - scurgere continuă (Id) la 25 ° C :
26A (Ta), 133A (Tc)
Tensiunea de transmisie (valorile max. :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3 mOhm @ 50A, 10V
Vgs (a) (Max) @ Id :
2V @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
40.7nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
2880pF @ 25V
FET Feature :
-
Distrugerea puterii (Max) :
4W (Ta), 100W (Tc)
Temperatura de Operare :
-55°C ~ 175°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
5-DFN (5x6) (8-SOFL)
Pachet / Caz :
8-PowerTDFN, 5 Leads
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