Vishay Semiconductor Diodes Division - RGP30M-E3/54

KEY Part #: K6440320

RGP30M-E3/54 Preț (USD) [204924buc Stoc]

  • 1 pcs$0.18049
  • 1,400 pcs$0.16433
  • 2,800 pcs$0.15337
  • 7,000 pcs$0.14607

Numărul piesei:
RGP30M-E3/54
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 1KV 3A DO201AD. Rectifiers 1000 Volt 3.0A 500ns 125 Amp IFSM
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tiristoare - TRIAC, Tranzistori - Unijuncții programabile, Dioduri - punți redresoare, Modulele Power Driver, Tiristoare - DIAC, SIDAC, Dioduri - RF and Dioduri - Zener - Single ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division RGP30M-E3/54 electronic components. RGP30M-E3/54 can be shipped within 24 hours after order. If you have any demands for RGP30M-E3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGP30M-E3/54 Atributele produsului

Numărul piesei : RGP30M-E3/54
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 1KV 3A DO201AD
Serie : SUPERECTIFIER®
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 1000V
Curent - mediu rectificat (Io) : 3A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.3V @ 3A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 500ns
Scurgeri reversibile de curent @ Vr : 5µA @ 1000V
Capacitate @ Vr, F : -
Tipul de montare : Through Hole
Pachet / Caz : DO-201AD, Axial
Pachetul dispozitivelor furnizorilor : DO-201AD
Temperatura de funcționare - Junction : -65°C ~ 175°C

Poți fi, de asemenea, interesat
  • IDB30E120ATMA1

    Infineon Technologies

    DIODE GEN PURP 1.2KV 50A TO263-3. Diodes - General Purpose, Power, Switching FAST SWITCH EMCON DIODE 1200V 30A

  • IDB30E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 52.3A TO263.

  • ES2AHM3/5BT

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 2A DO214AA. Rectifiers 2A,50V,20NS,UF Rect,SMD

  • EGP20B-E3/54

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 2A DO204AC. Rectifiers 2.0 Amp 100 Volt

  • 1N4585GP-E3/54

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 1A DO204AC. Rectifiers 1A,800V,STD SUPERECT,DO-15

  • GP15M-E3/54

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1KV 1.5A DO204. Rectifiers 1000 Volt 1.5 Amp 50 Amp IFSM