BSM75GD120DN2BOSA1 Preț (USD) [501buc Stoc]
- 1 pcs$92.62090
- Numărul piesei:
- BSM75GD120DN2BOSA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- IGBT 2 LOW POWER ECONO3-1.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - RF, Tranzistori - Unijuncții programabile, Dioduri - Zener - Single, Tranzistori - FET, MOSFET - Arrays, Dioduri - Redresoare - Arrays, Tranzistori - IGBT - Single, Tranzistori - FET, MOSFET - RF and Dioduri - Redresoare - Single ...
- Avantaj competitiv:
- We specialize in Infineon Technologies BSM75GD120DN2BOSA1 electronic components. BSM75GD120DN2BOSA1 can be shipped within 24 hours after order. If you have any demands for BSM75GD120DN2BOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM75GD120DN2BOSA1 Atributele produsului
Numărul piesei :
BSM75GD120DN2BOSA1
Producător :
Infineon Technologies
Descriere :
IGBT 2 LOW POWER ECONO3-1
Serie :
-
Starea parțială :
Not For New Designs
Tip IGBT :
-
configurație :
Three Phase Inverter
Tensiune - emițător colector (Max) :
1200V
Curent - Colector (Ic) (Max) :
103A
Putere - Max :
520W
Vce (pe) (Max) @ Vge, Ic :
3V @ 15V, 75A
Curentul curent - colector (maxim) :
1.5mA
Capacitate de intrare (Cies) @ Vce :
5.1nF @ 25V
Intrare :
Standard
Termistor NTC :
No
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Chassis Mount
Pachet / Caz :
Module
Pachetul dispozitivelor furnizorilor :
Module
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