Vishay Semiconductor Diodes Division - VS-GA200HS60S1PBF

KEY Part #: K6533630

[769buc Stoc]


    Numărul piesei:
    VS-GA200HS60S1PBF
    Producător:
    Vishay Semiconductor Diodes Division
    Descriere detaliata:
    IGBT 600V 480A 830W INT-A-PAK.
    Timpul de livrare standard al producătorului:
    In stoc
    Termen de valabilitate:
    Un an
    Chip From:
    Hong Kong
    RoHS:
    Modalitate de plată:
    Mod de expediere:
    Categorii de familii:
    KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Single, Tranzistori - FET, MOSFET - RF, Tranzistori - scop special, Tranzistori - FET, MOSFET - Single, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - punți redresoare, Tranzistori - IGBT - Arrays and Tiristoare - DIAC, SIDAC ...
    Avantaj competitiv:
    We specialize in Vishay Semiconductor Diodes Division VS-GA200HS60S1PBF electronic components. VS-GA200HS60S1PBF can be shipped within 24 hours after order. If you have any demands for VS-GA200HS60S1PBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    VS-GA200HS60S1PBF Atributele produsului

    Numărul piesei : VS-GA200HS60S1PBF
    Producător : Vishay Semiconductor Diodes Division
    Descriere : IGBT 600V 480A 830W INT-A-PAK
    Serie : -
    Starea parțială : Obsolete
    Tip IGBT : -
    configurație : Half Bridge
    Tensiune - emițător colector (Max) : 600V
    Curent - Colector (Ic) (Max) : 480A
    Putere - Max : 830W
    Vce (pe) (Max) @ Vge, Ic : 1.21V @ 15V, 200A
    Curentul curent - colector (maxim) : 1mA
    Capacitate de intrare (Cies) @ Vce : 32.5nF @ 30V
    Intrare : Standard
    Termistor NTC : No
    Temperatura de Operare : -40°C ~ 150°C (TJ)
    Tipul de montare : Chassis Mount
    Pachet / Caz : INT-A-Pak
    Pachetul dispozitivelor furnizorilor : INT-A-PAK

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