Vishay Semiconductor Diodes Division - BYWB29-100-E3/81

KEY Part #: K6456376

BYWB29-100-E3/81 Preț (USD) [108544buc Stoc]

  • 1 pcs$0.34076
  • 800 pcs$0.31916

Numărul piesei:
BYWB29-100-E3/81
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 100V 8A TO263AB. Rectifiers 8.0 Amp 100 Volt
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - JFET-uri, Tranzistori - IGBT - Single, Dioduri - punți redresoare, Tranzistori - scop special, Modulele Power Driver, Dioduri - Redresoare - Single, Dioduri - RF and Tranzistori - FET, MOSFET - Arrays ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division BYWB29-100-E3/81 electronic components. BYWB29-100-E3/81 can be shipped within 24 hours after order. If you have any demands for BYWB29-100-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYWB29-100-E3/81 Atributele produsului

Numărul piesei : BYWB29-100-E3/81
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 100V 8A TO263AB
Serie : -
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 100V
Curent - mediu rectificat (Io) : 8A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.3V @ 20A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 25ns
Scurgeri reversibile de curent @ Vr : 10µA @ 100V
Capacitate @ Vr, F : -
Tipul de montare : Surface Mount
Pachet / Caz : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pachetul dispozitivelor furnizorilor : TO-263AB
Temperatura de funcționare - Junction : -65°C ~ 150°C

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