Vishay Semiconductor Diodes Division - BAS19-HE3-08

KEY Part #: K6458601

BAS19-HE3-08 Preț (USD) [2884683buc Stoc]

  • 1 pcs$0.01282
  • 15,000 pcs$0.01186

Numărul piesei:
BAS19-HE3-08
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching 120 Volt 625mA 50ns
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Single, Dioduri - Capacitate variabilă (Varicaps, Varactor, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - FET, MOSFET - Single, Tranzistori - FET, MOSFET - RF, Tranzistori - FET, MOSFET - Arrays, Tranzistori - IGBT - Arrays and Dioduri - punți redresoare ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division BAS19-HE3-08 electronic components. BAS19-HE3-08 can be shipped within 24 hours after order. If you have any demands for BAS19-HE3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS19-HE3-08 Atributele produsului

Numărul piesei : BAS19-HE3-08
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 100V 200MA SOT23
Serie : Automotive, AEC-Q101
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 100V
Curent - mediu rectificat (Io) : 200mA
Tensiune - înainte (Vf) (Max) @ Dacă : 1.25V @ 200mA
Viteză : Small Signal =< 200mA (Io), Any Speed
Timp de recuperare invers (trr) : 50ns
Scurgeri reversibile de curent @ Vr : 100nA @ 100V
Capacitate @ Vr, F : 5pF @ 0V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : TO-236-3, SC-59, SOT-23-3
Pachetul dispozitivelor furnizorilor : SOT-23
Temperatura de funcționare - Junction : -55°C ~ 150°C

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