Infineon Technologies - BAS116E6433HTMA1

KEY Part #: K6458665

BAS116E6433HTMA1 Preț (USD) [3737866buc Stoc]

  • 1 pcs$0.01160
  • 10,000 pcs$0.01154

Numărul piesei:
BAS116E6433HTMA1
Producător:
Infineon Technologies
Descriere detaliata:
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Single, Tiristoare - DIAC, SIDAC, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - punți redresoare, Tranzistori - scop special, Dioduri - Zener - Arrays, Dioduri - RF and Tranzistori - Module IGBT ...
Avantaj competitiv:
We specialize in Infineon Technologies BAS116E6433HTMA1 electronic components. BAS116E6433HTMA1 can be shipped within 24 hours after order. If you have any demands for BAS116E6433HTMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS116E6433HTMA1 Atributele produsului

Numărul piesei : BAS116E6433HTMA1
Producător : Infineon Technologies
Descriere : DIODE GEN PURP 80V 250MA SOT23-3
Serie : -
Starea parțială : Last Time Buy
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 80V
Curent - mediu rectificat (Io) : 250mA (DC)
Tensiune - înainte (Vf) (Max) @ Dacă : 1.25V @ 150mA
Viteză : Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 1.5µs
Scurgeri reversibile de curent @ Vr : 5nA @ 75V
Capacitate @ Vr, F : 2pF @ 0V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : TO-236-3, SC-59, SOT-23-3
Pachetul dispozitivelor furnizorilor : SOT-23-3
Temperatura de funcționare - Junction : 150°C (Max)

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