BSM50GB120DN2HOSA1 Preț (USD) [1241buc Stoc]
- 1 pcs$34.90688
- Numărul piesei:
- BSM50GB120DN2HOSA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- IGBT 2 MED POWER 34MM-1.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Module IGBT, Tranzistori - scop special, Tranzistori - JFET-uri, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Modulele Power Driver, Dioduri - Zener - Single, Dioduri - RF and Tranzistori - Bipolari (BJT) - RF ...
- Avantaj competitiv:
- We specialize in Infineon Technologies BSM50GB120DN2HOSA1 electronic components. BSM50GB120DN2HOSA1 can be shipped within 24 hours after order. If you have any demands for BSM50GB120DN2HOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM50GB120DN2HOSA1 Atributele produsului
Numărul piesei :
BSM50GB120DN2HOSA1
Producător :
Infineon Technologies
Descriere :
IGBT 2 MED POWER 34MM-1
Serie :
-
Starea parțială :
Not For New Designs
Tip IGBT :
-
configurație :
Half Bridge
Tensiune - emițător colector (Max) :
1200V
Curent - Colector (Ic) (Max) :
78A
Putere - Max :
400W
Vce (pe) (Max) @ Vge, Ic :
3V @ 15V, 50A
Curentul curent - colector (maxim) :
1mA
Capacitate de intrare (Cies) @ Vce :
3.3nF @ 25V
Intrare :
Standard
Termistor NTC :
No
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Chassis Mount
Pachet / Caz :
Module
Pachetul dispozitivelor furnizorilor :
Module
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