[3905buc Stoc]
- Numărul piesei:
- TPC8211(TE12L,Q,M)
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET 2N-CH 30V 5.5A SOP8.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Modulele Power Driver, Dioduri - Zener - Arrays, Tranzistori - Bipolari (BJT) - RF, Dioduri - Redresoare - Arrays, Tranzistori - FET, MOSFET - Single, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - Zener - Single and Tranzistori - Bipolari (BJT) - Arrays, pre-biased ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TPC8211(TE12L,Q,M) electronic components. TPC8211(TE12L,Q,M) can be shipped within 24 hours after order. If you have any demands for TPC8211(TE12L,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8211(TE12L,Q,M) Atributele produsului
Numărul piesei :
TPC8211(TE12L,Q,M)
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET 2N-CH 30V 5.5A SOP8
Serie :
-
Starea parțială :
Obsolete
Tipul FET :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Scurgeți la sursa de tensiune (Vdss) :
30V
Curent - scurgere continuă (Id) la 25 ° C :
5.5A
Rds On (Max) @ Id, Vgs :
36 mOhm @ 3A, 10V
Vgs (a) (Max) @ Id :
2.5V @ 1mA
Chargeul prin poștă (Qg) (Max) @ Vgs :
25nC @ 10V
Capacitate de intrare (Ciss) (Max) @ Vds :
1250pF @ 10V
Putere - Max :
450mW
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Surface Mount
Pachet / Caz :
8-SOIC (0.173", 4.40mm Width)
Pachetul dispozitivelor furnizorilor :
8-SOP (5.5x6.0)
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