[8605buc Stoc]
- Numărul piesei:
- TPC8A02-H(TE12L,Q)
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET N-CH 30V 16A SOP8 2-6J1B.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Modulele Power Driver, Tranzistori - IGBT - Single, Dioduri - RF, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - Bipolari (BJT) - RF, Dioduri - Zener - Arrays, Dioduri - Capacitate variabilă (Varicaps, Varactor and Dioduri - Redresoare - Arrays ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TPC8A02-H(TE12L,Q) electronic components. TPC8A02-H(TE12L,Q) can be shipped within 24 hours after order. If you have any demands for TPC8A02-H(TE12L,Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8A02-H(TE12L,Q) Atributele produsului
Numărul piesei :
TPC8A02-H(TE12L,Q)
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET N-CH 30V 16A SOP8 2-6J1B
Serie :
-
Starea parțială :
Obsolete
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
30V
Curent - scurgere continuă (Id) la 25 ° C :
16A (Ta)
Tensiunea de transmisie (valorile max. :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.6 mOhm @ 8A, 10V
Vgs (a) (Max) @ Id :
2.3V @ 1mA
Chargeul prin poștă (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
1970pF @ 10V
FET Feature :
-
Distrugerea puterii (Max) :
1W (Ta)
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
8-SOP (5.5x6.0)
Pachet / Caz :
8-SOIC (0.173", 4.40mm Width)
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