SI4686DY-T1-GE3 Preț (USD) [126722buc Stoc]
- 1 pcs$0.29188
- 2,500 pcs$0.27408
- Numărul piesei:
- SI4686DY-T1-GE3
- Producător:
- Vishay Siliconix
- Descriere detaliata:
- MOSFET N-CH 30V 18.2A 8-SOIC.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Dioduri - Zener - Arrays, Dioduri - Redresoare - Arrays, Dioduri - Zener - Single, Tranzistori - FET, MOSFET - Arrays, Tranzistori - FET, MOSFET - Single, Tranzistori - Bipolari (BJT) - Single and Tranzistori - Bipolari (BJT) - Arrays, pre-biased ...
- Avantaj competitiv:
- We specialize in Vishay Siliconix SI4686DY-T1-GE3 electronic components. SI4686DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4686DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4686DY-T1-GE3 Atributele produsului
Numărul piesei :
SI4686DY-T1-GE3
Producător :
Vishay Siliconix
Descriere :
MOSFET N-CH 30V 18.2A 8-SOIC
Serie :
TrenchFET®, WFET®
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
30V
Curent - scurgere continuă (Id) la 25 ° C :
18.2A (Tc)
Tensiunea de transmisie (valorile max. :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 13.8A, 10V
Vgs (a) (Max) @ Id :
3V @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
26nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
1220pF @ 15V
FET Feature :
-
Distrugerea puterii (Max) :
3W (Ta), 5.2W (Tc)
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
8-SO
Pachet / Caz :
8-SOIC (0.154", 3.90mm Width)
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