Infineon Technologies - FD-DF80R12W1H3_B52

KEY Part #: K6532730

FD-DF80R12W1H3_B52 Preț (USD) [2473buc Stoc]

  • 1 pcs$17.50946

Numărul piesei:
FD-DF80R12W1H3_B52
Producător:
Infineon Technologies
Descriere detaliata:
IGBT MODULE VCES 1200V 40A.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - punți redresoare, Tranzistori - IGBT - Single, Tranzistori - FET, MOSFET - Single, Dioduri - Zener - Single, Tranzistori - Module IGBT, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - Redresoare - Single and Tranzistori - Bipolari (BJT) - Single ...
Avantaj competitiv:
We specialize in Infineon Technologies FD-DF80R12W1H3_B52 electronic components. FD-DF80R12W1H3_B52 can be shipped within 24 hours after order. If you have any demands for FD-DF80R12W1H3_B52, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FD-DF80R12W1H3_B52 Atributele produsului

Numărul piesei : FD-DF80R12W1H3_B52
Producător : Infineon Technologies
Descriere : IGBT MODULE VCES 1200V 40A
Serie : -
Starea parțială : Active
Tip IGBT : Trench Field Stop
configurație : Single
Tensiune - emițător colector (Max) : 1200V
Curent - Colector (Ic) (Max) : 40A
Putere - Max : 215W
Vce (pe) (Max) @ Vge, Ic : 2.4V @ 15V, 40A
Curentul curent - colector (maxim) : 1mA
Capacitate de intrare (Cies) @ Vce : 235nF @ 25V
Intrare : Standard
Termistor NTC : Yes
Temperatura de Operare : -40°C ~ 125°C
Tipul de montare : Chassis Mount
Pachet / Caz : Module
Pachetul dispozitivelor furnizorilor : Module

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