FF225R12ME4BOSA1 Preț (USD) [852buc Stoc]
- 1 pcs$54.52295
- Numărul piesei:
- FF225R12ME4BOSA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- IGBT MODULE VCES 1200V 225A.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - FET, MOSFET - Single, Dioduri - Redresoare - Arrays, Tranzistori - scop special, Tranzistori - FET, MOSFET - Arrays, Modulele Power Driver, Tranzistori - IGBT - Arrays and Tranzistori - Bipolari (BJT) - RF ...
- Avantaj competitiv:
- We specialize in Infineon Technologies FF225R12ME4BOSA1 electronic components. FF225R12ME4BOSA1 can be shipped within 24 hours after order. If you have any demands for FF225R12ME4BOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FF225R12ME4BOSA1 Atributele produsului
Numărul piesei :
FF225R12ME4BOSA1
Producător :
Infineon Technologies
Descriere :
IGBT MODULE VCES 1200V 225A
Serie :
-
Starea parțială :
Active
Tip IGBT :
Trench Field Stop
configurație :
2 Independent
Tensiune - emițător colector (Max) :
1200V
Curent - Colector (Ic) (Max) :
320A
Putere - Max :
1050W
Vce (pe) (Max) @ Vge, Ic :
2.15V @ 15V, 225A
Curentul curent - colector (maxim) :
3mA
Capacitate de intrare (Cies) @ Vce :
13nF @ 25V
Intrare :
Standard
Termistor NTC :
Yes
Temperatura de Operare :
-40°C ~ 150°C
Tipul de montare :
Chassis Mount
Pachet / Caz :
Module
Pachetul dispozitivelor furnizorilor :
Module
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