Infineon Technologies - FD900R12IP4DVBOSA1

KEY Part #: K6533422

FD900R12IP4DVBOSA1 Preț (USD) [184buc Stoc]

  • 1 pcs$251.42410

Numărul piesei:
FD900R12IP4DVBOSA1
Producător:
Infineon Technologies
Descriere detaliata:
IGBT MODULE VCES 1200V 900A.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Module IGBT, Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - FET, MOSFET - RF, Modulele Power Driver, Dioduri - Zener - Single, Dioduri - Redresoare - Single, Dioduri - Zener - Arrays and Tranzistori - Bipolari (BJT) - Unic, pre-Biased ...
Avantaj competitiv:
We specialize in Infineon Technologies FD900R12IP4DVBOSA1 electronic components. FD900R12IP4DVBOSA1 can be shipped within 24 hours after order. If you have any demands for FD900R12IP4DVBOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FD900R12IP4DVBOSA1 Atributele produsului

Numărul piesei : FD900R12IP4DVBOSA1
Producător : Infineon Technologies
Descriere : IGBT MODULE VCES 1200V 900A
Serie : -
Starea parțială : Active
Tip IGBT : Trench Field Stop
configurație : Single
Tensiune - emițător colector (Max) : 1200V
Curent - Colector (Ic) (Max) : 900A
Putere - Max : 5100W
Vce (pe) (Max) @ Vge, Ic : 2.05V @ 15V, 900A
Curentul curent - colector (maxim) : 5mA
Capacitate de intrare (Cies) @ Vce : 54nF @ 25V
Intrare : Standard
Termistor NTC : Yes
Temperatura de Operare : -40°C ~ 150°C
Tipul de montare : Chassis Mount
Pachet / Caz : Module
Pachetul dispozitivelor furnizorilor : Module

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