TK50P03M1(T6RSS-Q) Preț (USD) [275630buc Stoc]
- 1 pcs$0.14835
- 2,000 pcs$0.14761
- Numărul piesei:
- TK50P03M1(T6RSS-Q)
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET N-CH 30V 50A DP TO252-3.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - punți redresoare, Dioduri - Redresoare - Single, Dioduri - Capacitate variabilă (Varicaps, Varactor, Dioduri - Zener - Arrays, Modulele Power Driver, Tranzistori - IGBT - Single, Tranzistori - FET, MOSFET - RF and Tranzistori - scop special ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TK50P03M1(T6RSS-Q) electronic components. TK50P03M1(T6RSS-Q) can be shipped within 24 hours after order. If you have any demands for TK50P03M1(T6RSS-Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK50P03M1(T6RSS-Q) Atributele produsului
Numărul piesei :
TK50P03M1(T6RSS-Q)
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET N-CH 30V 50A DP TO252-3
Serie :
U-MOSVI-H
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
30V
Curent - scurgere continuă (Id) la 25 ° C :
50A (Ta)
Tensiunea de transmisie (valorile max. :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
7.5 mOhm @ 25A, 10V
Vgs (a) (Max) @ Id :
2.3V @ 200µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
25.3nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
1700pF @ 10V
FET Feature :
-
Distrugerea puterii (Max) :
47W (Tc)
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
DP
Pachet / Caz :
TO-252-3, DPak (2 Leads + Tab), SC-63
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