Vishay Semiconductor Diodes Division - VS-GA200TH60S

KEY Part #: K6533232

VS-GA200TH60S Preț (USD) [225buc Stoc]

  • 1 pcs$205.24209
  • 12 pcs$168.35316

Numărul piesei:
VS-GA200TH60S
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
IGBT 600V 260A 1042W INT-A-PAK.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - Single, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Dioduri - Redresoare - Arrays, Tranzistori - IGBT - Arrays, Tiristoare - DIAC, SIDAC, Tranzistori - IGBT - Single, Modulele Power Driver and Dioduri - Capacitate variabilă (Varicaps, Varactor ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division VS-GA200TH60S electronic components. VS-GA200TH60S can be shipped within 24 hours after order. If you have any demands for VS-GA200TH60S, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GA200TH60S Atributele produsului

Numărul piesei : VS-GA200TH60S
Producător : Vishay Semiconductor Diodes Division
Descriere : IGBT 600V 260A 1042W INT-A-PAK
Serie : -
Starea parțială : Active
Tip IGBT : -
configurație : Half Bridge
Tensiune - emițător colector (Max) : 600V
Curent - Colector (Ic) (Max) : 260A
Putere - Max : 1042W
Vce (pe) (Max) @ Vge, Ic : 1.9V @ 15V, 200A (Typ)
Curentul curent - colector (maxim) : 5µA
Capacitate de intrare (Cies) @ Vce : 13.1nF @ 25V
Intrare : Standard
Termistor NTC : No
Temperatura de Operare : -40°C ~ 150°C (TJ)
Tipul de montare : Chassis Mount
Pachet / Caz : Double INT-A-PAK (3 + 4)
Pachetul dispozitivelor furnizorilor : Double INT-A-PAK

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