NSB8DT-E3/81 Preț (USD) [143207buc Stoc]
- 1 pcs$0.25828
- 800 pcs$0.24191
- Numărul piesei:
- NSB8DT-E3/81
- Producător:
- Vishay Semiconductor Diodes Division
- Descriere detaliata:
- DIODE GEN PURP 200V 8A TO263AB. Rectifiers 200 Volt 8.0 Amp 125 Amp IFSM
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - scop special, Tranzistori - Module IGBT, Tranzistori - Bipolari (BJT) - Single, Modulele Power Driver, Tranzistori - IGBT - Single, Tranzistori - FET, MOSFET - Arrays, Tranzistori - IGBT - Arrays and Tranzistori - FET, MOSFET - RF ...
- Avantaj competitiv:
- We specialize in Vishay Semiconductor Diodes Division NSB8DT-E3/81 electronic components. NSB8DT-E3/81 can be shipped within 24 hours after order. If you have any demands for NSB8DT-E3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSB8DT-E3/81 Atributele produsului
Numărul piesei :
NSB8DT-E3/81
Producător :
Vishay Semiconductor Diodes Division
Descriere :
DIODE GEN PURP 200V 8A TO263AB
Serie :
-
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
200V
Curent - mediu rectificat (Io) :
8A
Tensiune - înainte (Vf) (Max) @ Dacă :
1.1V @ 8A
Viteză :
Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) :
-
Scurgeri reversibile de curent @ Vr :
10µA @ 200V
Capacitate @ Vr, F :
55pF @ 4V, 1MHz
Tipul de montare :
Surface Mount
Pachet / Caz :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pachetul dispozitivelor furnizorilor :
TO-263AB
Temperatura de funcționare - Junction :
-55°C ~ 150°C
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