[826buc Stoc]
- Numărul piesei:
- BSM75GB170DN2HOSA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- IGBT 1700V 110A 625W MODULE.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - RF, Tranzistori - scop special, Tranzistori - IGBT - Arrays, Tiristoare - SCR - Module, Dioduri - RF, Modulele Power Driver, Dioduri - Zener - Single and Tranzistori - FET, MOSFET - Arrays ...
- Avantaj competitiv:
- We specialize in Infineon Technologies BSM75GB170DN2HOSA1 electronic components. BSM75GB170DN2HOSA1 can be shipped within 24 hours after order. If you have any demands for BSM75GB170DN2HOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM75GB170DN2HOSA1 Atributele produsului
Numărul piesei :
BSM75GB170DN2HOSA1
Producător :
Infineon Technologies
Descriere :
IGBT 1700V 110A 625W MODULE
Serie :
-
Starea parțială :
Obsolete
Tip IGBT :
-
configurație :
Half Bridge
Tensiune - emițător colector (Max) :
1700V
Curent - Colector (Ic) (Max) :
110A
Putere - Max :
625W
Vce (pe) (Max) @ Vge, Ic :
3.9V @ 15V, 75A
Curentul curent - colector (maxim) :
-
Capacitate de intrare (Cies) @ Vce :
11nF @ 25V
Intrare :
Standard
Termistor NTC :
No
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Chassis Mount
Pachet / Caz :
Module
Pachetul dispozitivelor furnizorilor :
Module
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