IDC51D120T6MX1SA3 Preț (USD) [12304buc Stoc]
- 1 pcs$3.34932
- Numărul piesei:
- IDC51D120T6MX1SA3
- Producător:
- Infineon Technologies
- Descriere detaliata:
- DIODE GEN PURP 1.2KV 100A WAFER.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Dioduri - Capacitate variabilă (Varicaps, Varactor, Dioduri - Redresoare - Arrays, Dioduri - Zener - Single, Tranzistori - Module IGBT, Tranzistori - JFET-uri, Tranzistori - Bipolari (BJT) - Single and Dioduri - punți redresoare ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IDC51D120T6MX1SA3 electronic components. IDC51D120T6MX1SA3 can be shipped within 24 hours after order. If you have any demands for IDC51D120T6MX1SA3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDC51D120T6MX1SA3 Atributele produsului
Numărul piesei :
IDC51D120T6MX1SA3
Producător :
Infineon Technologies
Descriere :
DIODE GEN PURP 1.2KV 100A WAFER
Serie :
-
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
1200V
Curent - mediu rectificat (Io) :
100A
Tensiune - înainte (Vf) (Max) @ Dacă :
2.05V @ 100A
Viteză :
Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) :
-
Scurgeri reversibile de curent @ Vr :
18µA @ 1200V
Capacitate @ Vr, F :
-
Tipul de montare :
Surface Mount
Pachet / Caz :
Die
Pachetul dispozitivelor furnizorilor :
Sawn on foil
Temperatura de funcționare - Junction :
-40°C ~ 175°C
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