Vishay Semiconductor Diodes Division - BAV19W-G3-08

KEY Part #: K6439879

BAV19W-G3-08 Preț (USD) [2423462buc Stoc]

  • 1 pcs$0.01611
  • 15,000 pcs$0.01603

Numărul piesei:
BAV19W-G3-08
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 100V 250MA SOD123. Diodes - General Purpose, Power, Switching 120 Volt 200mA 50ns 1A IFSM
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Arrays, Tranzistori - IGBT - Single, Dioduri - punți redresoare, Tranzistori - Bipolari (BJT) - RF, Tranzistori - JFET-uri, Tranzistori - FET, MOSFET - Arrays, Tranzistori - scop special and Dioduri - Redresoare - Single ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division BAV19W-G3-08 electronic components. BAV19W-G3-08 can be shipped within 24 hours after order. If you have any demands for BAV19W-G3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV19W-G3-08 Atributele produsului

Numărul piesei : BAV19W-G3-08
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 100V 250MA SOD123
Serie : Automotive, AEC-Q101
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 100V
Curent - mediu rectificat (Io) : 250mA (DC)
Tensiune - înainte (Vf) (Max) @ Dacă : 1.25V @ 200mA
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 50ns
Scurgeri reversibile de curent @ Vr : 100nA @ 100V
Capacitate @ Vr, F : 1.5pF @ 0V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : SOD-123
Pachetul dispozitivelor furnizorilor : SOD-123
Temperatura de funcționare - Junction : 150°C (Max)

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