IRF7341PBF Preț (USD) [3768buc Stoc]
- 1 pcs$0.42646
- 10 pcs$0.37713
- 100 pcs$0.28203
- 500 pcs$0.21872
- 1,000 pcs$0.17267
- Numărul piesei:
- IRF7341PBF
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET 2N-CH 55V 4.7A 8-SOIC.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Module IGBT, Tranzistori - Unijuncții programabile, Modulele Power Driver, Dioduri - Zener - Arrays, Dioduri - Capacitate variabilă (Varicaps, Varactor, Dioduri - Zener - Single, Tranzistori - Bipolari (BJT) - Unic, pre-Biased and Dioduri - RF ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IRF7341PBF electronic components. IRF7341PBF can be shipped within 24 hours after order. If you have any demands for IRF7341PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7341PBF Atributele produsului
Numărul piesei :
IRF7341PBF
Producător :
Infineon Technologies
Descriere :
MOSFET 2N-CH 55V 4.7A 8-SOIC
Serie :
HEXFET®
Starea parțială :
Discontinued at Digi-Key
Tipul FET :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Scurgeți la sursa de tensiune (Vdss) :
55V
Curent - scurgere continuă (Id) la 25 ° C :
4.7A
Rds On (Max) @ Id, Vgs :
50 mOhm @ 4.7A, 10V
Vgs (a) (Max) @ Id :
1V @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
36nC @ 10V
Capacitate de intrare (Ciss) (Max) @ Vds :
740pF @ 25V
Putere - Max :
2W
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachet / Caz :
8-SOIC (0.154", 3.90mm Width)
Pachetul dispozitivelor furnizorilor :
8-SO
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