Vishay Semiconductor Diodes Division - RGF1K-E3/67A

KEY Part #: K6457707

RGF1K-E3/67A Preț (USD) [644975buc Stoc]

  • 1 pcs$0.07095
  • 1,500 pcs$0.07060
  • 3,000 pcs$0.06437
  • 7,500 pcs$0.06021
  • 10,500 pcs$0.05606

Numărul piesei:
RGF1K-E3/67A
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 800V 1A DO214BA. Diodes - General Purpose, Power, Switching 1 Amp 800 Volt 500ns 30 Amp IFSM
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Single, Tranzistori - IGBT - Arrays, Tranzistori - Bipolari (BJT) - RF, Dioduri - Zener - Arrays, Modulele Power Driver, Tranzistori - Bipolari (BJT) - Arrays, Tiristoare - TRIAC and Tranzistori - Bipolari (BJT) - Unic, pre-Biased ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division RGF1K-E3/67A electronic components. RGF1K-E3/67A can be shipped within 24 hours after order. If you have any demands for RGF1K-E3/67A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGF1K-E3/67A Atributele produsului

Numărul piesei : RGF1K-E3/67A
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 800V 1A DO214BA
Serie : SUPERECTIFIER®
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 800V
Curent - mediu rectificat (Io) : 1A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.3V @ 1A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 500ns
Scurgeri reversibile de curent @ Vr : 5µA @ 800V
Capacitate @ Vr, F : 8.5pF @ 4V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : DO-214BA
Pachetul dispozitivelor furnizorilor : DO-214BA (GF1)
Temperatura de funcționare - Junction : -65°C ~ 175°C

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