Vishay Semiconductor Diodes Division - VS-4ESH02HM3/86A

KEY Part #: K6444696

VS-4ESH02HM3/86A Preț (USD) [300257buc Stoc]

  • 1 pcs$0.12319
  • 1,500 pcs$0.11309
  • 3,000 pcs$0.10249
  • 7,500 pcs$0.09542
  • 10,500 pcs$0.09424

Numărul piesei:
VS-4ESH02HM3/86A
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 200V 4A TO277A.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Single, Tranzistori - Module IGBT, Tiristoare - DIAC, SIDAC, Tranzistori - Bipolari (BJT) - Arrays, Tiristoare - SCR - Module, Dioduri - Capacitate variabilă (Varicaps, Varactor, Tranzistori - Bipolari (BJT) - Unic, pre-Biased and Tranzistori - FET, MOSFET - Single ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division VS-4ESH02HM3/86A electronic components. VS-4ESH02HM3/86A can be shipped within 24 hours after order. If you have any demands for VS-4ESH02HM3/86A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-4ESH02HM3/86A Atributele produsului

Numărul piesei : VS-4ESH02HM3/86A
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 200V 4A TO277A
Serie : FRED Pt®
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 200V
Curent - mediu rectificat (Io) : 4A
Tensiune - înainte (Vf) (Max) @ Dacă : 930mV @ 4A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 20ns
Scurgeri reversibile de curent @ Vr : 2µA @ 200V
Capacitate @ Vr, F : -
Tipul de montare : Surface Mount
Pachet / Caz : TO-277, 3-PowerDFN
Pachetul dispozitivelor furnizorilor : TO-277A (SMPC)
Temperatura de funcționare - Junction : -65°C ~ 175°C

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