Vishay Semiconductor Diodes Division - BYM11-200-E3/96

KEY Part #: K6444636

BYM11-200-E3/96 Preț (USD) [817494buc Stoc]

  • 1 pcs$0.04525
  • 6,000 pcs$0.03671

Numărul piesei:
BYM11-200-E3/96
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 200V 1A DO213AB. Rectifiers 1.0 Amp 200 Volt
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Single, Tranzistori - Module IGBT, Modulele Power Driver, Tranzistori - Unijuncții programabile, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - Redresoare - Single, Tranzistori - Bipolari (BJT) - Unic, pre-Biased and Tranzistori - Bipolari (BJT) - Arrays, pre-biased ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division BYM11-200-E3/96 electronic components. BYM11-200-E3/96 can be shipped within 24 hours after order. If you have any demands for BYM11-200-E3/96, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYM11-200-E3/96 Atributele produsului

Numărul piesei : BYM11-200-E3/96
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 200V 1A DO213AB
Serie : SUPERECTIFIER®
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 200V
Curent - mediu rectificat (Io) : 1A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.3V @ 1A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 150ns
Scurgeri reversibile de curent @ Vr : 5µA @ 200V
Capacitate @ Vr, F : 15pF @ 4V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : DO-213AB, MELF (Glass)
Pachetul dispozitivelor furnizorilor : DO-213AB
Temperatura de funcționare - Junction : -65°C ~ 175°C

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