Vishay Semiconductor Diodes Division - BYM10-200HE3/97

KEY Part #: K6457773

BYM10-200HE3/97 Preț (USD) [675586buc Stoc]

  • 1 pcs$0.05475
  • 10,000 pcs$0.04962

Numărul piesei:
BYM10-200HE3/97
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 200V 1A DO213AB. Rectifiers 200 Volt 1.0 Amp Glass Passivated
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - RF, Tranzistori - FET, MOSFET - RF, Dioduri - punți redresoare, Modulele Power Driver, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - Zener - Arrays, Dioduri - Zener - Single and Tranzistori - FET, MOSFET - Single ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division BYM10-200HE3/97 electronic components. BYM10-200HE3/97 can be shipped within 24 hours after order. If you have any demands for BYM10-200HE3/97, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYM10-200HE3/97 Atributele produsului

Numărul piesei : BYM10-200HE3/97
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 200V 1A DO213AB
Serie : SUPERECTIFIER®
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 200V
Curent - mediu rectificat (Io) : 1A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.1V @ 1A
Viteză : Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) : -
Scurgeri reversibile de curent @ Vr : 10µA @ 200V
Capacitate @ Vr, F : 8pF @ 4V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : DO-213AB, MELF (Glass)
Pachetul dispozitivelor furnizorilor : DO-213AB
Temperatura de funcționare - Junction : -65°C ~ 175°C

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