Vishay Semiconductor Diodes Division - RGL34BHE3/83

KEY Part #: K6457675

RGL34BHE3/83 Preț (USD) [618527buc Stoc]

  • 1 pcs$0.05980
  • 9,000 pcs$0.05420

Numărul piesei:
RGL34BHE3/83
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tiristoare - SCR - Module, Tranzistori - IGBT - Single, Tranzistori - Module IGBT, Tiristoare - SCR-uri, Tranzistori - scop special, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Dioduri - RF and Tranzistori - Bipolari (BJT) - Single ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division RGL34BHE3/83 electronic components. RGL34BHE3/83 can be shipped within 24 hours after order. If you have any demands for RGL34BHE3/83, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGL34BHE3/83 Atributele produsului

Numărul piesei : RGL34BHE3/83
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 100V 500MA DO213
Serie : SUPERECTIFIER®
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 100V
Curent - mediu rectificat (Io) : 500mA
Tensiune - înainte (Vf) (Max) @ Dacă : 1.3V @ 500mA
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 150ns
Scurgeri reversibile de curent @ Vr : 5µA @ 100V
Capacitate @ Vr, F : 4pF @ 4V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : DO-213AA (Glass)
Pachetul dispozitivelor furnizorilor : DO-213AA (GL34)
Temperatura de funcționare - Junction : -65°C ~ 175°C

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