APTSM120AM55CT1AG Preț (USD) [657buc Stoc]
- 1 pcs$70.98259
- 100 pcs$70.62945
- Numărul piesei:
- APTSM120AM55CT1AG
- Producător:
- Microsemi Corporation
- Descriere detaliata:
- POWER MODULE - SIC.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Single, Dioduri - RF, Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - FET, MOSFET - Single, Tranzistori - IGBT - Single, Tiristoare - SCR-uri and Tranzistori - Bipolari (BJT) - Unic, pre-Biased ...
- Avantaj competitiv:
- We specialize in Microsemi Corporation APTSM120AM55CT1AG electronic components. APTSM120AM55CT1AG can be shipped within 24 hours after order. If you have any demands for APTSM120AM55CT1AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTSM120AM55CT1AG Atributele produsului
Numărul piesei :
APTSM120AM55CT1AG
Producător :
Microsemi Corporation
Descriere :
POWER MODULE - SIC
Serie :
-
Starea parțială :
Active
Tipul FET :
2 N-Channel (Dual), Schottky
FET Feature :
Silicon Carbide (SiC)
Scurgeți la sursa de tensiune (Vdss) :
1200V (1.2kV)
Curent - scurgere continuă (Id) la 25 ° C :
74A (Tc)
Rds On (Max) @ Id, Vgs :
50 mOhm @ 40A, 20V
Vgs (a) (Max) @ Id :
3V @ 2mA
Chargeul prin poștă (Qg) (Max) @ Vgs :
272nC @ 20V
Capacitate de intrare (Ciss) (Max) @ Vds :
5120pF @ 1000V
Putere - Max :
470W
Temperatura de Operare :
-40°C ~ 175°C (TJ)
Tipul de montare :
Chassis Mount
Pachet / Caz :
SP1
Pachetul dispozitivelor furnizorilor :
SP1
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