1N5406GHB0G Preț (USD) [1146094buc Stoc]
- 1 pcs$0.03227
- Numărul piesei:
- 1N5406GHB0G
- Producător:
- Taiwan Semiconductor Corporation
- Descriere detaliata:
- DIODE GEN PURP 600V 3A DO201AD.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - JFET-uri, Tranzistori - FET, MOSFET - Single, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tiristoare - SCR - Module, Tranzistori - Unijuncții programabile, Tranzistori - FET, MOSFET - RF and Tranzistori - Bipolari (BJT) - Arrays ...
- Avantaj competitiv:
- We specialize in Taiwan Semiconductor Corporation 1N5406GHB0G electronic components. 1N5406GHB0G can be shipped within 24 hours after order. If you have any demands for 1N5406GHB0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N5406GHB0G Atributele produsului
Numărul piesei :
1N5406GHB0G
Producător :
Taiwan Semiconductor Corporation
Descriere :
DIODE GEN PURP 600V 3A DO201AD
Serie :
Automotive, AEC-Q101
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
600V
Curent - mediu rectificat (Io) :
3A
Tensiune - înainte (Vf) (Max) @ Dacă :
1V @ 3A
Viteză :
Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) :
-
Scurgeri reversibile de curent @ Vr :
5µA @ 600V
Capacitate @ Vr, F :
25pF @ 4V, 1MHz
Tipul de montare :
Through Hole
Pachet / Caz :
DO-201AD, Axial
Pachetul dispozitivelor furnizorilor :
DO-201AD
Temperatura de funcționare - Junction :
-55°C ~ 150°C
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