Vishay Semiconductor Diodes Division - RS3KHE3_A/I

KEY Part #: K6427984

RS3KHE3_A/I Preț (USD) [361840buc Stoc]

  • 1 pcs$0.10222
  • 3,500 pcs$0.09346

Numărul piesei:
RS3KHE3_A/I
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 800V 3A DO214AB. Rectifiers 800 Volt 3.0A 500ns 100 Amp IFSM
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tiristoare - SCR-uri, Tranzistori - Bipolari (BJT) - Single, Dioduri - Redresoare - Single, Tranzistori - IGBT - Arrays, Tranzistori - IGBT - Single, Tiristoare - TRIAC and Tranzistori - Bipolari (BJT) - Arrays ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division RS3KHE3_A/I electronic components. RS3KHE3_A/I can be shipped within 24 hours after order. If you have any demands for RS3KHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS3KHE3_A/I Atributele produsului

Numărul piesei : RS3KHE3_A/I
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 800V 3A DO214AB
Serie : Automotive, AEC-Q101
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 800V
Curent - mediu rectificat (Io) : 3A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.3V @ 2.5A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 500ns
Scurgeri reversibile de curent @ Vr : 10µA @ 800V
Capacitate @ Vr, F : 34pF @ 4V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : DO-214AB, SMC
Pachetul dispozitivelor furnizorilor : DO-214AB (SMC)
Temperatura de funcționare - Junction : -55°C ~ 150°C

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