Vishay Semiconductor Diodes Division - BAV21W-G3-18

KEY Part #: K6440022

BAV21W-G3-18 Preț (USD) [2423462buc Stoc]

  • 1 pcs$0.01611
  • 10,000 pcs$0.01603

Numărul piesei:
BAV21W-G3-18
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 200V 250MA SOD123. Diodes - General Purpose, Power, Switching 250 Volt 200mA 50ns 1A IFSM
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Zener - Single, Tranzistori - JFET-uri, Tranzistori - Module IGBT, Tranzistori - FET, MOSFET - Arrays, Tranzistori - IGBT - Arrays, Dioduri - Capacitate variabilă (Varicaps, Varactor, Tranzistori - Bipolari (BJT) - Unic, pre-Biased and Tranzistori - Bipolari (BJT) - Single ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division BAV21W-G3-18 electronic components. BAV21W-G3-18 can be shipped within 24 hours after order. If you have any demands for BAV21W-G3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV21W-G3-18 Atributele produsului

Numărul piesei : BAV21W-G3-18
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 200V 250MA SOD123
Serie : Automotive, AEC-Q101
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 200V
Curent - mediu rectificat (Io) : 250mA (DC)
Tensiune - înainte (Vf) (Max) @ Dacă : 1V @ 100mA
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 50ns
Scurgeri reversibile de curent @ Vr : 100nA @ 150V
Capacitate @ Vr, F : 1.5pF @ 0V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : SOD-123
Pachetul dispozitivelor furnizorilor : SOD-123
Temperatura de funcționare - Junction : 175°C (Max)

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