1N4150W-HE3-18 Preț (USD) [2750629buc Stoc]
- 1 pcs$0.01419
- 10,000 pcs$0.01412
- Numărul piesei:
- 1N4150W-HE3-18
- Producător:
- Vishay Semiconductor Diodes Division
- Descriere detaliata:
- DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tiristoare - SCR - Module, Tranzistori - IGBT - Single, Tranzistori - IGBT - Arrays, Dioduri - Capacitate variabilă (Varicaps, Varactor, Dioduri - Zener - Arrays, Tranzistori - FET, MOSFET - Single, Tiristoare - TRIAC and Tranzistori - Module IGBT ...
- Avantaj competitiv:
- We specialize in Vishay Semiconductor Diodes Division 1N4150W-HE3-18 electronic components. 1N4150W-HE3-18 can be shipped within 24 hours after order. If you have any demands for 1N4150W-HE3-18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N4150W-HE3-18 Atributele produsului
Numărul piesei :
1N4150W-HE3-18
Producător :
Vishay Semiconductor Diodes Division
Descriere :
DIODE GEN PURP 50V 200MA SOD123
Serie :
-
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
50V
Curent - mediu rectificat (Io) :
200mA
Tensiune - înainte (Vf) (Max) @ Dacă :
1V @ 200mA
Viteză :
Small Signal =< 200mA (Io), Any Speed
Timp de recuperare invers (trr) :
4ns
Scurgeri reversibile de curent @ Vr :
100nA @ 50V
Capacitate @ Vr, F :
2.5pF @ 0V, 1MHz
Tipul de montare :
Surface Mount
Pachet / Caz :
SOD-123
Pachetul dispozitivelor furnizorilor :
SOD-123
Temperatura de funcționare - Junction :
-55°C ~ 150°C
Cele mai recente știri
Poți fi, de asemenea, interesat
-
BAS19
ON Semiconductor
DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA
-
MMBD4448
ON Semiconductor
DIODE GEN PURP 75V 200MA SOT23-3. Diodes - General Purpose, Power, Switching Hi Conductance Fast
-
MMBD1501A
ON Semiconductor
DIODE GEN PURP 200V 200MA SOT23. Diodes - General Purpose, Power, Switching High Voltage General Purpose
-
BAS29
ON Semiconductor
DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA
-
BAV20W-E3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 250MA SOD123. Diodes - General Purpose, Power, Switching 200V 625mA 1A IFSM
-
1N4148W-HE3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 75V 150MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns
Piese calde
- MBR1645-10HE3/45
- D251K12BXPSA1
- JTXM19500/469-05
- UF1503S-B
- SB05-05C-M-TB-E
- LS412060
- FR204TA
- JANTX1N6661US
- RGP10K-M3/73
- GP10G-4004E-M3/73
- RU 3AM
- RF 1A
- SD24145
- JANTXV1N5802
- MBRB1050HE3/45
- HER604-TP
- SS1H10HE3/61T
- S5MHE3/57T
- ESH2PD-E3/84A
- SS8PH9HM3/87A
- SS2P3-E3/85A
- SS1H10HE3/5AT
- SS19-E3/5AT
- GP30KHE3/54
- GP20B-E3/54
- EGP20DHE3/73
- STPS1545R
- STTH3002G
- LSM345JE3
- ES2A-TP
- VS-HFA16TB120PBF
- VS-1N5819
- 241NQ045R
- 1N6630
- RL103-AP
- ER303-AP
- RO 2CV1
- RU 3AV1
- S10MC M6G
- ES3A M6G